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0 0.000455684666211053 0.00227842333105494 0.00410116199589883 0.00364547732968794 0.00478468899521533 -0.00113921166552739 -0.00113921166552739
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New Vishay Intertechnology Gen 3 1200 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs [Yahoo! Finance]

Vishay Intertechnology, Inc. (VSH) 
Last vishay intertechnology, inc. earnings: 2/4 07:00 am Check Earnings Report
US:NYSE Investor Relations: ir.vishay.com
Company Research Source: Yahoo! Finance
MALVERN, Pa., June 26, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes . Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The next-generation SiC diodes released today consist of 5 A to 40 A devices in the TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface-mount packages. The diodes offer a low capacitance charge down to 28 nC, while their MPS structure — which features a backside thinned via laser annealing technology — delivers a reduced forward voltage drop of 1.35 V. In addition, the devices' low typical reverse leakage current down to 2.5 µA at 25 °C reduces conduction losses, ensuring high system efficiency during light loads and idling Show less Read more
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