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0 0.00032992411745292 -0.000659848234905958 0.000659848234905958 -0.00362916529198282 -0.000329924117453037 -0.00725833058396577 -0.00725833058396577
Stock impact report

Vishay Intertechnology 150 V MOSFET Increases Efficiency With the Industry’s Lowest RDS(ON) of 5.6 mO and RDS(ON)*Qg FOM of 336 mO*nC

Vishay Intertechnology, Inc. (VSH) 
Last vishay intertechnology, inc. earnings: 2/4 07:00 am Check Earnings Report
US:NYSE Investor Relations: ir.vishay.com
Company Research Source: GlobeNewswire
MALVERN, Pa., Nov. 20, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower RthJC and 179 % higher continuous drain current. With the industry’s lowest on-resistance of 5.6 mO at 10 V and on-resistance times gate charge FOM of 336 mO*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of Show less Read more
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