Shin-Etsu Chemical to Develop a QSTTM Substrate for 300-mm GaN
SHIN-ETSU CHEM UNSP/ADR (SHECY)
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Source: Business Wire
TOKYO--(BUSINESS WIRE)--Shin-Etsu Chemical Co., Ltd. (TOKYO: 4063)(Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) has created a 300-mm (12-inch) QSTTM substrate, which is a substrate dedicated to GaN epitaxial growth, and recently started supplying samples.Shin-Etsu Chemical has sold 150-mm (6-inch) and 200-mm (8-inch) QSTTM substrates and GaN on QSTTM epitaxial substrates of each diameter. Meanwhile, the company worked on further increasing the diameter in response to strong customer demand and successfully developed a 300-mm (12-inch) QSTTM substrate. GaN device manufacturers cannot benefit from increasing the diameter of materials because of the lack in large-diameter substrate suitable for GaN growth, despite the fact that they can use the existing Si production line for GaN. This 300-mm QSTTM substrate enables GaN epitaxial growth without warping or cracks, which was unattainable on Si substrates, thus significantly reducing device costs. I
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