ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance
ROHM CO LTD UNSP/ADR (ROHCY)
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Source: GlobeNewswire
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR) for automotive applications such as onboard chargers (OBCs), with plans to deploy eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters in December 2024. The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, which provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs typically feature smaller creepage distances, a fact that makes high-voltage t
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