Mitsubishi Electric to Ship Samples of SiC-MOSFET Bare Die for xEVs
MITSUBISHI ELEC UNSP/ADR (MIELY)
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Source: Business Wire
Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) bare die for use in drive-motor inverters of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs) and other electric vehicles (xEVs) on November 14. Mitsubishi Electric’s first standard-specification SiC-MOSFET power semiconductor chip will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles. The new SiC-MOSFET bare die for xEVs combines a proprietary chip structure and manufacturing technologies to contribute to decarbonization by enhancing inverter performance, extending driving range and improving energy efficiency in xEVs.Mitsubishi Electric’s new power semiconductor chip is a proprietary trench
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