Infineon pioneers world's first 300 mm power gallium nitride (GaN) technology - an industry game-changer
INFINEON TECHS AG S/ADR (IFNNY)
NASDAQ:AMEX Investor Relations:
infineon.com/cms/en/about-infineon/investor
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Source: PR Newswire
Infineon will shape the rapidly growing GaN market with this groundbreaking GaN 300 mm technologyInfineon leverages existing large scale 300 mm silicon manufacturing to maximize capital efficiency in GaN production300 mm GaN will help achieve cost parity with silicon over timeMUNICH and VILLACH, Austria, Sept. 11, 2024 /PRNewswire/ --- Picture is available at AP -Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter offers 2.3 times more chips per wafer.GaN-based
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